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PolarHV TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXFA 16N50P
IXFH 16N50P
IXFP 16N50P
V DSS
I D25
R DS(on)
t rr
= 500 V
= 16 A
≤ 400 m ?
≤ 200 ns
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
500
500
V
V
TO-263 (IXTA)
V GS
V GSM
Continuous
Transient
± 30
± 40
V
V
G
S
I D25
I DM
I AR
E AR
E AS
dv/dt
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
16
35
16
25
750
10
A
A
A
mJ
mJ
V/ns
TO-247 (IXFH)
(TAB)
T J ≤ 150 ° C, R G = 10 ?
S
P D
T J
T JM
T stg
T L
T SOLD
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s soldering
300
-55 ... +150
150
-55 ... +150
300
260
W
° C
° C
° C
° C
° C
G
D
TO-220 (IXTP)
D (TAB)
M d
Mounting torque
(TO-247 & TO-220)
1.13/10 Nm/lb.in.
Weight
TO-220
TO-263
TO-247
4
3
5.5
g
g
g
G
D S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
Features
BV DSS
V GS = 0 V, I D = 250 μ A
500
V
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International standard packages
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 2.5 mA
V GS = ± 30 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
T J = 125 ° C
3.0
5.5
± 100
5
250
V
nA
μ A
μ A
l
l
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
400 m ?
Advantages
l
? 2006 IXYS All rights reserved
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Space savings
High power density
DS99357E(03/06)
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